A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance

Bond wire lift-off is one of the major failure mechanisms in insulated gate bipolar transistor (IGBT) modules. Detecting fault bond wires important to avoid open-circuit IGBT ensure reliable operation power converters. In this paper, we propose a novel fatigue detection method for IGBT, which could be used normal working conditions. Firstly, investigated dependence on heatsink thermal resistance. An aging rate K was proposed compare measured resistance with initial value, indicate fatigue. Then, verified by simulation and experimental results under different current levels. Finally, cycling test show process module, shows feasibility method.